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SUD08P06-155L Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SUD08P06-155L
Description  P-Channel 60-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD08P06-155L Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SUD08P06-155L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73209
S-50385—Rev. A, 07-Mar-05
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = −250 mA
−60
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
−1.0
−2.0
−3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = −60 V, VGS = 0 V
−1
Zero Gate Voltage Drain Current
IDSS
VDS = −60 V, VGS = 0 V, TJ = 125_C
−50
mA
g
DSS
VDS = −60 V, VGS = 0 V, TJ = 175_C
−150
m
On-State Drain Currentb
ID(on)
VDS = −5 V, VGS = −10 V
−10
A
VGS = −10 V, ID = −5 A
0.125
0.155
Drain Source On State Resistanceb
r
VGS = −10 V, ID = −5 A, TJ = 125_C
0.280
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = −10 V, ID = −5 A, TJ = 175_C
0.350
W
VGS = −4.5 V, ID = −2 A
0.158
0.280
Forward Transconductanceb
gfs
VDS = −15 V, ID = −5 A
8
S
Dynamic
Input Capacitance
Ciss
450
Output Capacitance
Coss
VDS = −25 V, VGS = 0 V, f = 1 MHz
65
pF
Reverse Transfer Capacitance
Crss
40
Total Gate Charge
Qg
12.5
19
Gate-Source Charge
Qgs
VDS = −30 V, VGS = −10 V, ID = −8.4 A
2.3
nC
Gate-Drain Charge
Qgd
DS
, GS
, D
3.2
Gate Resistance
Rg
f = 1 MHz
8.0
W
Turn-On Delay Timec
td(on)
5
10
Rise Timec
tr
VDD = −30 V, RL = 3.57 W
14
25
ns
Turn-Off Delay Timec
td(off)
VDD
30 V, RL 3.57 W
ID ] 8.4 A, VGEN = −10 V, Rg = 2.5 W
15
25
ns
Fall Timec
tf
g
7
12
Source-Drain Diode Ratings and Characteristics (TC = 25_C)a
Pulsed Current
ISM
−20
A
Forward Voltageb
VSD
IF = −2 A, VGS = 0 V
−0.9
−1.3
V
Reverse Recovery Time
trr
IF = 8 A di/dt = 100 A/ms
50
80
ns
Reverse Recovery Charge
Qrr
IF = −8 A, di/dt = 100 A/ms
80
120
nC
Notes:
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
c.
Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.


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