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SUD08P06-155L Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SUD08P06-155L
Description  P-Channel 60-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD08P06-155L Datasheet(HTML) 1 Page - Vishay Siliconix

   
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FEATURES
D TrenchFETr Power MOSFET
D 175_C Rated Maximum Junction Temperature
APPLICATIONS
D Automotive Such As:
− High-Side Switch
− Motor Drives
− 12-V Battery
Termination
is Pb-free
SUD08P06-155L
Vishay Siliconix
New Product
Document Number: 73209
S-50385—Rev. A, 07-Mar-05
www.vishay.com
1
P-Channel 60-V (D-S), 175
_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
Qg (Typ)
60
0.155 @ VGS = −10 V
−8.4
12 5
−60
0.280 @ VGS = −4.5 V
−7.4
12.5
TO-252
S
GD
Top View
Drain Connected to Tab
S
G
D
P-Channel MOSFET
Ordering Information: SUD08P06-155L—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 175_C)
TC = 25_C
ID
−8.4
Continuous Drain Current (TJ = 175_C)
TC = 100_C
ID
−6
Pulsed Drain Current
IDM
−18
A
Continuing Source Current (Diode Conduction)
IS
−8.4
Avalanche Current
IAS
−12
Single-Pulse Avalanche Energy
L = 0.1 mH
EAS
7.2
mJ
Maximum Power Dissipation
TC = 25_C
PD
25a
W
Maximum Power Dissipation
TA = 25_C
PD
2b
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Jti
t A bi tb
t p 10 sec
R
20
25
Junction-to-Ambientb
Steady State
RthJA
62
75
_C/W
Junction-to-Case
RthJC
5
6
C/W
Notes
a.
See SOA Curve for Voltage Derating.
b.
Surface Mounted on 1” x 1” FR4 Board.


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