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STPS20H100CR Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STPS20H100CR
Description  HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STPS20H100CR Datasheet(HTML) 4 Page - STMicroelectronics

   
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STPS20H100CT/CF/CG/CG-1
4/8
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
T
δ=tp/T
tp
Fig. 7-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(TO-220AB, D
2PAK, I2PAK).
0
102030
4050
60708090
100
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
IR(µA)
VR(V)
Tj=125°C
Tj=100°C
Tj=25°C
Tj=150°C
Fig. 8: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1
2
5
10
20
50
100
100
200
500
1000
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 9: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
tp(s)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
Fig. 7-2: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOWATT220AB, TO-220FPAB).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1.0
10.0
100.0
IFM(A)
Tj=125°C
Typical values
Tj=125°C
Tj=25°C
Tj=150°C
Typical values
VFM(V)
Fig. 10: Forward voltage drop versus forward
current (maximum values, per diode).
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
S(Cu) (cm²)
Rth(j-a) (°C/W)
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35µm) (D
2PAK).


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