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PH1955L Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. PH1955L
Description  Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PH1955L Datasheet(HTML) 3 Page - NXP Semiconductors

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PH1955L_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2005
3 of 12
Philips Semiconductors
PH1955L
N-channel TrenchMOS logic level FET
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature
Tmb =25 °C; IDM is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03aa16
0
40
80
120
0
50
100
150
200
Tmb (
°C)
Pder
(%)
03aa24
0
40
80
120
0
50
100
150
200
Tmb (°C)
Ider
(%)
P
der
P
tot
P
tot 25
C
°
()
------------------------
100 %
×
=
I
der
I
D
I
D25 C
°
()
---------------------
100 %
×
=
003aaa642
1
10
10
2
10
3
1
10
10
2
ID
(A)
DC
100 ms
10 ms
1 ms
100
µs
Limit RDSon = VDS / ID
VDS (V)
tp = 10 µs


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