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PH1955L Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. PH1955L
Description  Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PH1955L Datasheet(HTML) 5 Page - NXP Semiconductors

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PH1955L_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2005
5 of 12
Philips Semiconductors
PH1955L
N-channel TrenchMOS logic level FET
6.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID = 250 µA; VGS =0V
Tj =25 °C
55
--V
Tj = −55 °C
50
--V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; see Figure 9 and 10
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
-
V
Tj = −55 °C
-
-
2.3
V
IDSS
drain leakage current
VDS =55V; VGS =0V
Tj =25 °C
-
0.02
1
µA
Tj = 175 °C
-
-
500
µA
IGSS
gate leakage current
VGS = ±15 V; VDS = 0 V
-
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID = 25 A; see Figure 6 and 8
Tj =25 °C
-
16.3
19
m
Tj = 175 °C
--40
m
VGS = 4.5 V; ID = 25 A; see Figure 6 and 8
--21
m
VGS = 10 V; ID = 25 A; see Figure 6 and 8
-
14.3
17.3
m
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDD =44V; VGS = 5 V; see
Figure 11
-18
-
nC
QGS
gate-source charge
-
5
-
nC
QGD
gate-drain charge
-
8
-
nC
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz; see
Figure 14
-
1494
1992
pF
Coss
output capacitance
-
217
260
pF
Crss
reverse transfer capacitance
-
86
118
pF
td(on)
turn-on delay time
VDS =30V; RL = 1.2 Ω; VGS =5V; RG =10 Ω
-18
-
ns
tr
rise time
-
180
-
ns
td(off)
turn-off delay time
-
44
-
ns
tf
fall time
-
134
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; see Figure 13
-
0.85
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs; VGS =0V;
VR =30V
-52
-
ns
Qr
recovered charge
-
38
-
nC


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