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PH1955L Datasheet(PDF) 4 Page - NXP Semiconductors |
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PH1955L Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page PH1955L_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 15 August 2005 4 of 12 Philips Semiconductors PH1955L N-channel TrenchMOS logic level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 2 K/W Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration 003aaa643 single pulse 0.2 0.1 0.05 0.02 10 -2 10 -1 1 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 tp (s) Zth(j-mb) (K/W) δ = 0.5 tp tp T P t T δ = 10 -6 |
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