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MRF5S21090HR3 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc

Part No. MRF5S21090HR3
Description  To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
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Maker  FREESCALE [Freescale Semiconductor, Inc]
Homepage  http://www.freescale.com
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MRF5S21090HR3 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc

 
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RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
µAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th)
2.5
2.9
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 850 mAdc)
VGS(Q)
3.9
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.25
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
5
S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
1.7
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, Pout = 19 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @
±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset.. Peak/Avg. = 8.5 dB @ 0.01%
Probability on CCDF
Power Gain
Gps
12.5
14.5
dB
Drain Efficiency
ηD
24
26
%
Intermodulation Distortion
IM3
- 37.5
-35
dBc
Adjacent Channel Power Ratio
ACPR
- 40.5
-38
dBc
Input Return Loss
IRL
-15
-9
dB
1. Part is internally matched both on input and output.


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