6

RF Device Data

Freescale Semiconductor

MRF5S21090HR3 MRF5S21090HSR3

TYPICAL CHARACTERISTICS

Figure 8. 2 - Carrier W - CDMA ACPR, IM3,

Power Gain and Drain Efficiency

versus Output Power

0

−55

30

−25

25

−30

20

−35

15

−40

5

−50

110

ACPR

IM3

−45

10

f2 = 2145 MHz, 2 x W−CDMA, 10 MHz

@ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB

@ 0.01% Probability (CCDF)

−15

−20

40

35

220

100

Figure 9. MTTF Factor versus Junction Temperature

120

140

160

180

200

10

.0001

100

0

PEAK−TO−AVERAGE (dB)

Figure 10. CCDF W - CDMA 3GPP, Test Model 1,

64 DPCH, 67% Clipping, Single Carrier Test Signal

10

1

0.1

0.01

0.001

24

68

Figure 11. 2-Carrier W-CDMA Spectrum

f, FREQUENCY (MHz)

−110

−120

−70

−20

−80

−60

−50

−90

−100

−40

−30

3.84 MHz

Channel BW

−IM3 @

3.84 MHz BW

+IM3 @

3.84 MHz BW

−ACPR @

3.84 MHz BW

+ACPR @

3.84 MHz BW

20

515

10

0

−5

−10

−15

−20

−25

25

drain current. Life tests at elevated temperatures have correlated to

better than

±10% of the theoretical prediction for metal failure. Divide

W - CDMA TEST SIGNAL