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MRF5S19130HR3 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc

Part No. MRF5S19130HR3
Description  Suitable for TDMA, CDMA and multicarrier amplifier applications.
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Maker  FREESCALE [Freescale Semiconductor, Inc]
Homepage  http://www.freescale.com
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MRF5S19130HR3 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc

 
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MRF5S19130HR3 MRF5S19130HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ =
1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 13 dB
Drain Efficiency — 25%
IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 51 dB @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
110 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 V Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
438
2.50
W
W/
°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
CW Operation
CW
110
W
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°C, 115 W CW
Case Temperature 78
°C, 26 W CW
RθJC
0.40
0.46
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF5S19130H
Rev. 1, 12/2004
Freescale Semiconductor
Technical Data
MRF5S19130HR3
MRF5S19130HSR3
1990 MHz, 26 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19130HSR3
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19130HR3
 Freescale Semiconductor, Inc., 2004. All rights reserved.


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