COP8AME9 datasheet(11/83 Pages) NSC

Part #	COP8AME9

Description	8-Bit CMOS Flash Microcontroller with 8k Memory, Dual Op Amps, Virtual EEROM, Temperature Sensor,10-Bit A/D and Brownout Reset

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Manufacturer	NSC [National Semiconductor (TI)]

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8.0 Electrical Characteristics (Continued)

DC Electrical Characteristics (−40˚C

≤ T

A ≤ +85˚C) (Continued)

Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.

Parameter

Conditions

Min

Typ

Max

Units

Output Current Levels

Source (Weak Pull-Up Mode)

V

CC = 4.5V, VOH = 3.8V

−10

µA

Source (Push-Pull Mode)

V

CC = 4.5V, VOH = 3.8V

−7

mA

Sink (Push-Pull Mode) (Note 7)

V

CC = 4.5V, VOL = 1.0V

10

mA

Allowable Sink Current per Pin

15

mA

TRI-STATE Leakage

V

CC = 5.5V

−0.5

+0.5

µA

Maximum Input Current without Latchup (Note 5)

±200

mA

RAM Retention Voltage, V

R (in HALT Mode)

2.0

V

Input Capacitance

7pF

Voltage on G6 to force execution from Boot ROM

(Note 8)

G6 rise time must be

slower than 100 ns

2xV

CC

V

CC +7

V

G6 Rise Time to force execution from Boot ROM

100

nS

Input Current on G6 when Input > V

CC

V

IN = 11V, VCC = 5.5V

500

µA

Flash Endurance

100k

cycles

Flash Data Retention

25˚C

100

years

AC Electrical Characteristics (−40˚C

≤ T

A ≤ +85˚C)

Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.

Parameter

Conditions

Min

Typ

Max

Units

Instruction Cycle Time (t

C)

Crystal/Resonator

4.5V

≤ V

CC

≤ 5.5V

0.5

DC

µs

Frequency of MICROWIRE/PLUS in

Slave Mode

2

MHz

MICROWIRE/PLUS Setup Time (t

UWS)20

ns

MICROWIRE/PLUS Hold Time (t

UWH)20

ns

MICROWIRE/PLUS Output Propagation

Delay (t

UPD)

150

ns

Input Pulse Width

Interrupt Input High Time

1

t

C

Interrupt Input Low Time

1

t

C

Timer 1 Input High Time

1

t

C

Timer 1 Input Low Time

1

t

C

Timer 2, 3 Input High Time (Note 6)

1

MCLK or t

C

Timer 2, 3 Input Low Time (Note 6)

1

MCLK or t

C

Output Pulse Width

Timer 2, 3 Output High Time

150

ns

Timer 2, 3 Output Low Time

150

ns

USART Bit Time when using External

CKX

6 CKI

periods

USART CKX Frequency when being

Driven by Internal Baud Rate Generator

2

MHz

Reset Pulse Width

0.5

µs

Flash Memory Mass Erase Time

8

ms

Flash Memory Page Erase Time

See Table 13, Typical

Flash Memory

Endurance

1ms

tC = instruction cycle time.

Note 2: Maximum rate of voltage change must be < 0.5 V/ms.

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