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IDT70V3389S Datasheet(PDF) 6 Page - Integrated Device Technology

Part No. IDT70V3389S
Description  HIGH-SPEED 3.3V SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
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Maker  IDT [Integrated Device Technology]
Homepage  http://www.idt.com
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IDT70V3389S Datasheet(HTML) 6 Page - Integrated Device Technology

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6.42
IDT70V3389S
High-Speed 64K x 18 3.3V Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
6
Re c om m e nde d Ope ra t ing
Te m pe ra t ure a nd Supply Volt a ge (1)
Absolut e M a x im um Ra t ings(1)
Trut h Ta ble I I —Addre ss Count e r Cont rol(1,2)
NOTES:
1. "H" = VIH, "L" = VIL, "X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/W, CE0, CE1, BEn and OE.
3. Outputs are in Pipelined mode: the data out will be delayed by one cycle.
4. ADS and CNTRST are independent of all other memory control signals including CE0, CE1 and BEn
5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other memory control signals including CE0, CE1, BEn.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or
4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV.
NOTES:
1. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
Address
Previous
Address
Addr
Used
CLK
ADS
CNTEN
CNTRST
I/O(3)
MODE
XX
0
XX
L(4)
DI/O(0)
Counter Reset to Address 0
An
X
An
L(4)
XH
DI/O (n)
External Address Used
An
Ap
Ap
HH
H
DI/O(p)
External Address Blocked—Counter disabled (Ap reused)
XAp
Ap + 1
H
L(5)
HDI/O(p+1)
Counter Enabled—Internal Address generation
4832 tbl 03
Grade
Ambient
Temperature
GND
VDD
Commercial
0OC to +70OC0V
3.3V
+ 150mV
Industrial
-40OC to +85OC0V
3.3V
+ 150mV
4832 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.15
3.3
3.45
V
VDDQ
I/O Supply Voltage(3)
2.375
2.5
2.625
V
VSS
Ground
0
0
0
V
VIH
Input High Voltage(3)
(Address & Control Inputs)
1.7
____
VDDQ + 125mV(2)
V
VIH
Input High Voltage - I/O(3)
1.7
____
VDDQ + 125mV(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.7
V
4832 tbl 05a
Symbol
Rating
Commercial
& Industrial
Unit
VTERM(2)
Terminal Voltage
with Respect to
GND
-0.5 to +4.6
V
TBIAS
Temperature
Under Bias
-55 to +125
o
C
TSTG
Storage
Temperature
-65 to +150
o
C
IOUT
DC Output Current
50
mA
4832 tbl 06
Re c om m e nde d DC Ope ra t ing
Condit ions w it h V DDQ a t 2 .5 V
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VDDQ + 125mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VIL (0V), and VDDQX for that port must be
supplied as indicated above.
Re c om m e nde d DC Ope ra t ing
Condit ions w it h V DDQ a t 3 .3 V
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VDDQ + 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be
supplied as indicated above.
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.15
3.3
3.45
V
VDDQ
I/O Supply Voltage(3)
3.15
3.3
3.45
V
VSS
Ground
0
0
0
V
VIH
Input High Voltage
(Address & Control Inputs)(3)
2.0
____
VDDQ + 150mV(2)
V
VIH
Input High Voltage - I/O(3)
2.0
____
VDDQ + 150mV(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
4832 tbl 05b


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