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2SK3077A Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3077A Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SK3077A 2002-01-09 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications · Output power: Po ≥ 20.5dBmW · Gain: Gp ≥ 10.5dB · Drain Efficiency: ηD ≥ 50% Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 10 V Gate-source voltage VGSS 5 V Drain current ID 0.1 A Power dissipation PD 0.1 W Channel temperature Tch 150 °C Storage temperature range Tstg −45~150 °C Marking Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output power PO 20.5 ¾ ¾ dBmW Drain efficiency ηD 50 ¾ ¾ % Power gain GP VDS = 4.5 V, Iidle = 20 mA (VGS = adjust) f = 470 MHz, Pi = 10dBmW 10.5 ¾ ¾ dB Threshold voltage Vth VDS = 4.8 V, ID = 0.5 mA 0.25 ¾ 1.25 V Drain cut-off current IDSS VDS = 10 V, VGS = 0 V ¾ ¾ 10 µA Gate-source leakage current IGSS VGS = 5 V, VDS = 0 V ¾ ¾ 5 µA Load mismatch (Note 1) ¾ VDS = 6.5 V, f = 470 MHz, Pi = 10dBmW, Po = 20.5dBmW (VGS = adjust) VSWR LOAD 10:1 all phase No degradation ¾ Caution: This transistor is the electrostatic sensitive device. Please handle with caution. Note 1: When the RF output power test fixture is used Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2K1D 4 W A 3 1 2 1, 3 Source 2 Gate 4 Drain |
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