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2SK3077 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3077 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SK3077 2001-12-26 1 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) l Output Power : PO = 15.0 dBmW (Min.) l Gain : GP = 15.0 dB (Min.) l Drain Efficiency : ηD = 20% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS 5 V Drain Current ID 0.1 A Power Dissipation PD* 0.1 W Channel Temperature Tch 150 °C Storage Temperature Range Tstg −45~150 °C *: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB MARKING Unit: mm JEDEC — JEITA — TOSHIBA 2−2K1D |
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