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2SD0968A Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. 2SD0968A
Description  For Low-Frequency Driver Amplification
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Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
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2SD0968A Datasheet(HTML) 1 Page - Panasonic Semiconductor

   
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Publication date: December 2003
SJC00202DED
Transistors
2SD0968A (2SD968A)
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SB0789A (2SB789A)
■ Features
• High collector-emitter voltage (Base open) VCEO
• Large collector power dissipation P
C
• Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a = 25°C ± 3°C
4.5±0.1
3.0±0.15
45˚
1.6±0.2
1.5±0.1
0.5±0.08
0.4±0.04
0.4±0.08
12
3
1.5±0.1
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Unit: mm
Marking Symbol: V
Note) The part numbers in the parenthesis show conventional part number.
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion.
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
120
V
Collector-emitter voltage (Base open)
VCEO
120
V
Emitter-base voltage (Collector open)
VEBO
5V
Peak collector current
ICP
1A
Collector current
IC
0.5
A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 100 µA, IB = 0
120
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 05
V
Forward current transfer ratio *1
hFE1 *2
VCE
= 10 V, I
C
= 150 mA
130
330
hFE2
VCE = 5 V, IC = 500 mA
50
Collector-emitter saturation voltage *1
VCE(sat)
IC = 500 mA, IB = 50 mA
0.2
0.6
V
Base-emitter saturation voltage *1
VBE(sat)
IC
= 500 mA, I
B
= 50 mA
0.85
1.20
V
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
20
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
130 to 220
185 to 330


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