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M45PE10-VMN6T Datasheet(PDF) 26 Page - STMicroelectronics |
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M45PE10-VMN6T Datasheet(HTML) 26 Page - STMicroelectronics |
26 / 34 page M45PE10 26/34 Table 12. AC Characteristics (25MHz operation) Note: 1. tCH + tCL must be greater than or equal to 1/ fC(max) 2. Value guaranteed by characterization, not 100% tested in production. 3. When using PP and PW instructions to update consecutive Bytes, optimized timings are obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1 ≤n ≤256) Test conditions specified in Table 8. and Table 9. Symbol Alt. Parameter Min. Typ. Max. Unit fC fC Clock Frequency for the following instructions: FAST_READ, PW, PP, PE, SE, DP, RDP, WREN, WRDI, RDSR D.C. 25 MHz fR Clock Frequency for READ instructions D.C. 20 MHz tCH 1 tCLH Clock High Time 18 ns tCL 1 tCLL Clock Low Time 18 ns Clock Slew Rate 2 (peak to peak) 0.03 V/ns tSLCH tCSS S Active Setup Time (relative to C) 10 ns tCHSL S Not Active Hold Time (relative to C) 10 ns tDVCH tDSU Data In Setup Time 5 ns tCHDX tDH Data In Hold Time 5 ns tCHSH S Active Hold Time (relative to C) 10 ns tSHCH S Not Active Setup Time (relative to C) 10 ns tSHSL tCSH S Deselect Time 200 ns tSHQZ 2 tDIS Output Disable Time 15 ns tCLQV tV Clock Low to Output Valid 15 ns tCLQX tHO Output Hold Time 0 ns tRLRH 2 tRST Reset Pulse Width 10 µs tRHSL tREC Reset Recovery Time 3 µs tSHRH Chip should have been deselected before Reset is de-asserted 10 ns tWHSL Write Protect Setup Time 50 ns tSHWL Write Protect Hold Time 100 ns tDP 2 S to Deep Power-down 3 µs tRDP 2 S High to Standby Power mode 30 µs tPW (3) Page Write Cycle Time (256 Bytes) 11 25 ms Page Write Cycle Time (n Bytes) 10.2+ n*0.8/256 tPP (3) Page Program Cycle Time (256 Bytes) 1.2 5ms Page Program Cycle Time (n Bytes) 0.4+ n*0.8/256 tPE Page Erase Cycle Time 10 20 ms tSE Sector Erase Cycle Time 1 5 s |
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