Transistors

1

Publication date: January 2003

SJC00189CED

Rank

Q

R

S

85 to 170

120 to 240

170 to 340

Silicon NPN epitaxial planar type

For low-frequency output amplification

Complementary to 2SB0621A (2SB621A)

■ Features

• Large collector power dissipation P

C

• Low collector-emitter saturation voltage V

CE(sat)

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

60

V

Collector-emitter voltage (Base open)

50

V

Emitter-base voltage (Collector open)

5V

Collector current

1

A

Peak collector current

1.5

A

Collector power dissipation

750

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

= 10 µA, I

E

= 060

V

Collector-emitter voltage (Base open)

V

Emitter-base voltage (Collector open)

V

Collector-base cutoff current (Emitter open)

= 20 V, I

E

= 0

0.1

µA

Forward current transfer ratio

85

340



50

Collector-emitter saturation voltage

= 500 mA, I

B

= 50 mA

0.2

0.4

V

Base-emitter saturation voltage

0.85

1.20

V

Transition frequency

200

MHz

Collector output capacitance

= 10 V, I

E

= 0, f = 1 MHz

20

pF

(Common base, input open circuited)

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

1: Emitter

2: Collector

3: Base

TO-92-B1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

0.45

+0.15

–0.1

2.5

+0.6

–0.2

0.45

+0.15

–0.1

2.5

12 3

+0.6

–0.2

Note) The part number in the parenthesis shows conventional part number.