Transistors

1

Publication date: December 2002

SJC00283BED

2SC5295J

Silicon NPN epitaxial planar type

For 2 GHz band low-noise amplification

■ Features

• High transition frequency f

T

• Low collector output capacitance (Common base, input open cir-

• SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base cutoff current (Emitter open)

= 10 V, I

E

= 01

µA

Emitter-base cutoff current (Collector open)

µA

50

170



Transition frequency

= 8 V, I

C

= 15 mA, f = 1.5 GHz

7.0

8.5

GHz

Collector output capacitance

= 10 V, I

E

= 0, f = 1 MHz

0.6

1.0

pF

(Common base, input open circuited)

Foward transfer gain

S

2

7

9

dB

Maximum unilateral power gain

10

dB

Noise figure

NF

= 8 V, I

C

= 7 mA, f = 1.5 GHz

2.2

3.0

dB

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

15

V

Collector-emitter voltage (Base open)

10

V

Emitter-base voltage (Collector open)

2V

Collector current

65

mA

Collector power dissipation

125

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Marking Symbol: 3S

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

R

50 to 120

100 to 170

3

12

0.12

+0.03

–0.01

5˚

1.60

+0.05

–0.03

(0.50)(0.50)

1: Base

2: Emitter

3: Collector

EIAJ: SC-89

SSMini3-F1 Package