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HL7851G Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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HL7851G Datasheet(HTML) 1 Page - Hitachi Semiconductor |
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1 / 4 page  173 HL7851G GaAlAs Laser Diode Description The HL7851G is a high power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability. Features • Visible light output: λp = 785 nm Typ • Small beam ellipticity: 9.5:23 • High output power: 50 mW (CW) • Built-in monitor photodiode |
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