STM8401 datasheet(3/11 Pages) SAMHOP

Part #	STM8401

Description	Dual Enhancement Mode Field Effect Transistor(N and P Channel)

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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S T M8401

=

Parameter

Symbol

Condition

Min Typ Max Unit

OFF CHAR ACTER ISTICS

Drain-Source Breakdown Voltage

BVDSS

=

VGS 0V, ID -250uA

=

-30

V

Zero Gate Voltage Drain Current

IDSS

VDS -24V, VGS 0V

=

-1

Gate-Body Leakage

IGSS

VGS 20V, VDS 0V

=

nA

Gate Threshold Voltage

VGS(th)

VDS VGS, ID = -250uA

=

-1

-1.5 -2.5

V

Drain-Source On-State R esistance

R DS(ON)

VGS -10V, ID -4.5A

55

VGS -4.5V, ID -3.6A

75

85

On-State Drain Current

ID(ON)

VDS = -5V, VGS = -10V

A

S

Forward Transconductance

FS

g

VDS -15V, ID - 4.5A

DYNAMIC CHAR ACTER ISTICS

c

Input Capacitance

CISS

CRSS

COSS

Output Capacitance

R everse Transfer Capacitance

VDS =-15V, VGS = 0V

f =1.0MHZ

P

F

P

F

P

F

SWITCHING CHAR ACTER ISTICS

c

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OFF)

tf

VD = -15V,

R L = 15

ID = -1A,

VGEN = -10V,

R GEN = 6

ns

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

Qgd

VDS =-15V, ID = - 4.9A,

VGS =-10V

nC

C

Fall Time

=

3

ON CHAR ACTER ISTICS b

45

100

m ohm

P-Channel ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)

nC

VDS=-15V,ID=-4.9A,VGS=-10V

VDS=-15V,ID=-4.9A,VGS=-4.5V

591

129

89

7.1

4.3

58.3

21.6

13.2

6.3

2.3

3.3

-12

5

uA

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