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IRIS-F6426S Datasheet(PDF) 2 Page - International Rectifier

Part # IRIS-F6426S
Description  INTEGRATED SWITCHER
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRIS-F6426S Datasheet(HTML) 2 Page - International Rectifier

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*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 5 due to patterning, the maximum switching current decreases as shown by V
2-5 in Fig.1
Accordingly please use this device within the decrease value, referring to the derating curve of the
maximum switching current.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
IRIS-F6426S
Symbol
Definition
Terminals Max. Ratings
Units
Note
IDpeak
Drain Current
*1
3-2
16
A
Single Pulse
V2-5=0.78V
Ta=-20~+125℃
IL peak=6.7A
Vin
Input voltage for control part
4-5
35
V
Vth
O.C.P/F.B Pin voltage
1-5
6
V
52
W
With infintite heatsink
2.8
W
Without heatsink
Power dissipation for control part
(Control IC) *4
Internal frame temperature
Refer to recommended
in operation
operating temperature
Top
Operating ambient temperature
-
-20 ~ +125
Tstg
Storage temperature
-
-40 ~ +125
Tch
Channel temperature
-
150
Single Pulse
PD1
Power dissipation for MOSFET *3
3-2
A
Single pulse avalanche energy *2
3-2
EAS
327
mJ
Maximum switching current *5
3-2
IDMAX
16
Specified by
Vin×Iin
-
TF
-20 ~ +125
4-5
PD2
0.49
W
V2-5
Fig.1


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