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IRIS-F6426S Datasheet(PDF) 2 Page - International Rectifier |
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IRIS-F6426S Datasheet(HTML) 2 Page - International Rectifier |
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2 / 7 page  www.irf.com *1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and Pin 5 due to patterning, the maximum switching current decreases as shown by V 2-5 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. IRIS-F6426S Symbol Definition Terminals Max. Ratings Units Note IDpeak Drain Current *1 3-2 16 A Single Pulse V2-5=0.78V Ta=-20~+125℃ IL peak=6.7A Vin Input voltage for control part 4-5 35 V Vth O.C.P/F.B Pin voltage 1-5 6 V 52 W With infintite heatsink 2.8 W Without heatsink Power dissipation for control part (Control IC) *4 Internal frame temperature Refer to recommended in operation operating temperature Top Operating ambient temperature - -20 ~ +125 ℃ Tstg Storage temperature - -40 ~ +125 ℃ Tch Channel temperature - 150 ℃ Single Pulse PD1 Power dissipation for MOSFET *3 3-2 A Single pulse avalanche energy *2 3-2 EAS 327 mJ Maximum switching current *5 3-2 IDMAX 16 Specified by Vin×Iin - TF -20 ~ +125 ℃ 4-5 PD2 0.49 W V2-5 Fig.1 |
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