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XP151A02BOMR Datasheet(PDF) 3 Page - Torex Semiconductor

Part No. XP151A02BOMR
Description  N-Channel Power MOS FET with low on-state resistance and ultra High-Speed Switching Characteristics.
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Maker  TOREX [Torex Semiconductor]
Homepage  http://www.torex.co.jp
Logo TOREX - Torex Semiconductor

XP151A02BOMR Datasheet(HTML) 3 Page - Torex Semiconductor

  XP151A02BOMR Datasheet HTML 1Page - Torex Semiconductor XP151A02BOMR Datasheet HTML 2Page - Torex Semiconductor XP151A02BOMR Datasheet HTML 3Page - Torex Semiconductor XP151A02BOMR Datasheet HTML 4Page - Torex Semiconductor  
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XP151A02B0MR
Power MOS FET
448
u
0.5
0.4
0.3
0.2
0.1
0
-60
-30
0
30
60
90
120
150
Id＝0.8A
0.4A
0.4A,0.8A
4.5V
Vgs＝2.5V
Pulse Test
Drain/Source On-State Resistance vs. Ambient Temp.
Ambient Temperature:Topr (
:)
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-60
-30
0
30
60
90
120
150
    Ambient Temperature:Topr (
:)
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Vds=10V, Id=1mA
■ XP151A02B0MR Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
0123
   Drain/Source Voltage:Vds (V)
     Drain Current vs. Drain /Source Voltage
Pulse Test, Ta=25
:
2V
4.5V
4V
3.5V
3V
5V
2.5V
Vgs＝1.5V
-55℃
Topr＝25℃
2.5
2.0
1.5
1.0
0.5
0.0
0123
    Gate/Source Voltage:Vgs (V)
Drain Current vs. Gate/Source Voltage
Pulse Test, Vds=10V
125℃
Id＝0.4A
0.8A
0.5
0
0.2
0.1
0.3
0.4
04
26
8
10
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
Pulse Test, Ta=25
:
Vgs＝2.5V
1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Drain Current
Pulse Test, Ta=25
:
4.5V


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