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XP151A02BOMR Datasheet(PDF) 2 Page - Torex Semiconductor

Part No. XP151A02BOMR
Description  N-Channel Power MOS FET with low on-state resistance and ultra High-Speed Switching Characteristics.
Download  4 Pages
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Maker  TOREX [Torex Semiconductor]
Homepage  http://www.torex.co.jp
Logo TOREX - Torex Semiconductor

XP151A02BOMR Datasheet(HTML) 2 Page - Torex Semiconductor

  XP151A02BOMR Datasheet HTML 1Page - Torex Semiconductor XP151A02BOMR Datasheet HTML 2Page - Torex Semiconductor XP151A02BOMR Datasheet HTML 3Page - Torex Semiconductor XP151A02BOMR Datasheet HTML 4Page - Torex Semiconductor  
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447
u
DC characteristics
Ta=25
:
s Electrical Characteristics
PARAMETER
UNITS
Gate-Source Cut-off Voltage
Vgs(off)
0.7
V
0.32
0.24
Id=0.4A, Vgs=2.5V
Gate-Source Leakage Current
Igss
µA
±10
Forward Transfer Admittance
(note)
2.5
S
Body Drain Diode
Forward Voltage
0.8
1.1
V
Drain Cut-off Current
Idss
10
µA
Vf
Vds=20V, Vgs=0V
Id=1mA, Vds=10V
Id=0.4A, Vds=10V
If=0.8A, Vgs=0V
Vgs=
±12V, Vds=0V
Drain-Source On-state
Resistance (note)
Rds(on)
Id=0.4A, Vgs=4.5V
0.15
0.2
SYMBOL
CONDITIONS
MAX
MIN
TYP
PARAMETER
UNITS
Feedback Capacitance
Crss
pF
Output Capacitance
Coss
pF
Input Capacitance
Ciss
30
100
180
pF
Vds=10V, Vgs=0V
f=1MHz
SYMBOL
CONDITIONS
MAX
MIN
TYP
Dynamic characteristics
Ta=25
:
Effective during pulse test.
Note:
Yfs
PARAMETER
UNITS
Fall Time
tf
ns
Rise Time
tr
ns
Turn-on Delay Time
td (on)
55
Turn-off Delay Time
td (off)
ns
30
15
10
ns
Vgs=5V, Id=0.4A
Vdd=10V
SYMBOL
CONDITIONS
MAX
MIN
TYP
Switching characteristics
Ta=25
:
PARAMETER
UNITS
Rth (ch-a)
Thermal Resistance
(channel-surroundings)
250
:/W
Implement on a glass epoxy
resin PCB
SYMBOL
CONDITIONS
MAX
MIN
TYP
Thermal characteristics


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