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XP151A02BOMR Datasheet(PDF) 1 Page - Torex Semiconductor

Part No. XP151A02BOMR
Description  N-Channel Power MOS FET with low on-state resistance and ultra High-Speed Switching Characteristics.
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Maker  TOREX [Torex Semiconductor]
Homepage  http://www.torex.co.jp
Logo TOREX - Torex Semiconductor

XP151A02BOMR Datasheet(HTML) 1 Page - Torex Semiconductor

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XP151A02B0MR
Power MOS FET
446
u
3
1
2
3
D
1
G
2
S
x N-Channel Power MOS FET
x DMOS Structure
x Low On-State Resistance: 0.2Ω MAX
x Ultra High-Speed Switching
x SOT-23 Package
s Applications
q Notebook PCs
q Cellular and portable phones
q On-board power supplies
q Li-ion battery systems
s General Description
The XP151A02B0MR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-23 package makes high density mounting possible.
s Features
Low on-state resistance: Rds(on)=0.2
Ω(Vgs=4.5V)
Rds(on)=0.32
Ω(Vgs=2.5V)
Ultra high-speed switching
Operational Voltage: 2.5V
High density mounting: SOT-23
s Absolute Maximum Ratings
s Equivalent Circuit
s Pin Configuration
N-Channel MOS FET
(1 device built-in)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
20
±12
0.8
2.5
0.8
0.5
150
-55~150
V
V
A
A
A
W
:
:
SYMBOL
RATINGS
UNITS
s Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
G
D
S
Gate
Drain
Source
SOT-23
(TOP VIEW)
Ta=25
:
When implemented on a glass epoxy PCB
Note:


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