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XP151A02BOMR Datasheet(PDF) 1 Page - Torex Semiconductor |
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XP151A02BOMR Datasheet(HTML) 1 Page - Torex Semiconductor |
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XP151A02B0MR Power MOS FET 446 u 3 1 2 3 D 1 G 2 S x N-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.2Ω MAX x Ultra High-Speed Switching x SOT-23 Package s Applications q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s General Description The XP151A02B0MR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-23 package makes high density mounting possible. s Features Low on-state resistance: Rds(on)=0.2 Ω(Vgs=4.5V) Rds(on)=0.32 Ω(Vgs=2.5V) Ultra high-speed switching Operational Voltage: 2.5V High density mounting: SOT-23 s Absolute Maximum Ratings s Equivalent Circuit s Pin Configuration N-Channel MOS FET (1 device built-in) PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Vdss Vgss Id Idp Idr Pd Tch Tstg 20 ±12 0.8 2.5 0.8 0.5 150 -55~150 V V A A A W : : SYMBOL RATINGS UNITS s Pin Assignment PIN NUMBER PIN NAME FUNCTION 1 3 2 G D S Gate Drain Source SOT-23 (TOP VIEW) Ta=25 : When implemented on a glass epoxy PCB Note: |
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