AO7600
Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
TJ=55°C
5
IGSS
25
µA
VGS(th)
0.5
0.75
0.9
V
ID(ON)
5A
181
300
TJ=125°C
253
330
237
350
m
Ω
317
450
m
Ω
gFS
2.6
S
VSD
0.69
1
V
IS
0.4
A
Ciss
101
120
pF
Coss
17
pF
Crss
14
pF
Rg
34
Ω
Qg
1.57
1.9
nC
Qgs
0.13
nC
Qgd
0.36
nC
tD(on)
3.2
ns
tr
4ns
tD(off)
15.5
ns
tf
2.4
ns
trr
6.7
8.1
ns
Qrr
1.6
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
VDS=5V, ID=0.8A
VGS=4.5V, ID=0.9A
Forward Transconductance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
VGS=0V, VDS=10V, f=1MHz
Diode Forward Voltage
IS=0.5A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Turn-On DelayTime
Turn-On Rise Time
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=0.8A
SWITCHING PARAMETERS
m
Ω
VGS=2.5V, ID=0.75A
VGS=1.8V, ID=0.7A
RDS(ON)
Static Drain-Source On-Resistance
Gate Threshold Voltage
VDS=VGS ID=250µA
On state drain current
VGS=4.5V, VDS=5V
µA
Gate-Body leakage current
VDS=0V, VGS=±8V
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
N-Channel: Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Body Diode Reverse Recovery Charge
Total Gate Charge
IF=0.8A, dI/dt=100A/µs
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=0.8A, dI/dt=100A/µs
VGS=5V, VDS=10V, RL=12.5Ω,
RGEN=6Ω
Gate Source Charge
Gate Drain Charge
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : July 2005
Alpha & Omega Semiconductor, Ltd.
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
