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SKM 100 GB 125 DN
M100G125 - 19
0,0001
0,001
0,01
0,1
1
0,00001
0,0001
0,001
0,01
0,1
1
tp
s
ZthJC
K/W
D=0,50
0,20
0,10
0,05
0,02
0,01
single pulse
M100G125 - 22
0
40
80
120
040
80
120
IF
A
IRR
A
RG=
6
Ω
20
Ω
12
Ω
9 Ω
60
Ω
M100G125 - 23
0
40
80
120
0
2500
5000
diF/dt
A/us
IRR
A
RG= 6 Ω
20
Ω
60
Ω
12
Ω
9
Ω
M100G125 - 24
0
5
10
15
20
0
2500
5000
diF/dt
A/us
Qrr
uC
RG= 6Ω
12 Ω
20
Ω
IF=
100 A
75 A
56 A
38 A
9 Ω
19 A
60
Ω
M100G125 - 20
0,0001
0,001
0,01
0,1
1
0,00001
0,0001
0,001
0,01
0,1
1
s
ZthJC
K/W
D=0,5
0,2
0,1
0,05
0,02
0,01
single pulse
tp
Fig. 19 Transient thermal impedance of IGBT
ZthJC = f (tp); D = tp / tc = tp · f
Fig. 20 Transient thermal impedance of
inverse CAL diodes Zthjc = f (tp); D = tp / tc = tp · f
Fig. 22 Typ. CAL diode peak reverse recovery
current IRR = f (IF; RG)
Fig. 23 Typ. CAL diode peak reverse recovery
current IRR = f (di/dt)
Fig. 24 Typ. CAL diode recovered charge Qrr = f (di/dt)
VCC = 600 V
Tj = 125 °C
VGE = ± 15 V
VCC = 600 V
Tj = 125 °C
VGE = ± 15 V
VCC = 600 V
Tj = 125 °C
VGE = ± 15 V
IF = 75 A