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K4D64163HF-TC36 Datasheet(PDF) 11 Page - Samsung semiconductor

Part # K4D64163HF-TC36
Description  1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4D64163HF-TC36 Datasheet(HTML) 11 Page - Samsung semiconductor

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64M DDR SDRAM
K4D64163HF
- 11 -
Rev. 1.1(Aug. 2002)
DC CHARACTERISTICS
Note : 1. Measured with outputs open.
2. Refresh period is 64ms.
Parameter
Symbol
Test Condition
Version
Unit Note
-33
-36
-40
-50
-60
Operating Current
(One Bank Active)
ICC1
Burst Lenth=2
tRC
tRC(min)
IOL=0mA, tCC= tCC(min)
210
200
190
170
160
mA
1
Precharge Standby Current
in Power-down mode
ICC2P
CKE
≤ VIL(max), tCC= tCC(min)
5mA
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
110
105
95
80
70
mA
Active Standby Current
power-down mode
ICC3P
CKE
≤ VIL(max), tCC= tCC(min)
110
105
95
80
70
mA
Active Standby Current in
in Non Power-down mode
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
160
150
140
120
100
mA
Operating Current
( Burst Mode)
ICC4
tRC
tRFC(min)tRC tRFC(min)
Page Burst, All Banks activated.
390
370
350
320
300
mA
Refresh Current
ICC5
tRC
tRFC(min)
210
200
190
180
170
mA
2
Self Refresh Current
ICC6
CKE
≤ 0.2V
2
mA
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65
°C)
1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
Note :
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, VDD=3.3V+ 5%, VDDQ=2.5V+ 5%,TA=0 to 65
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Input High (Logic 1) Voltage; DQ
VIH
VREF+0.35
-
-
V
Input Low (Logic 0) Voltage; DQ
VIL
--
VREF-0.35
V
Clock Input Differential Voltage; CK and CK
VID
0.7
-
VDDQ+0.6
V
1
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
2


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