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K4D64163HF-TC36 Datasheet(PDF) 11 Page - Samsung semiconductor |
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K4D64163HF-TC36 Datasheet(HTML) 11 Page - Samsung semiconductor |
11 / 16 page 64M DDR SDRAM K4D64163HF - 11 - Rev. 1.1(Aug. 2002) DC CHARACTERISTICS Note : 1. Measured with outputs open. 2. Refresh period is 64ms. Parameter Symbol Test Condition Version Unit Note -33 -36 -40 -50 -60 Operating Current (One Bank Active) ICC1 Burst Lenth=2 tRC ≥ tRC(min) IOL=0mA, tCC= tCC(min) 210 200 190 170 160 mA 1 Precharge Standby Current in Power-down mode ICC2P CKE ≤ VIL(max), tCC= tCC(min) 5mA Precharge Standby Current in Non Power-down mode ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC= tCC(min) 110 105 95 80 70 mA Active Standby Current power-down mode ICC3P CKE ≤ VIL(max), tCC= tCC(min) 110 105 95 80 70 mA Active Standby Current in in Non Power-down mode ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC= tCC(min) 160 150 140 120 100 mA Operating Current ( Burst Mode) ICC4 tRC ≥ tRFC(min)tRC ≥ tRFC(min) Page Burst, All Banks activated. 390 370 350 320 300 mA Refresh Current ICC5 tRC ≥ tRFC(min) 210 200 190 180 170 mA 2 Self Refresh Current ICC6 CKE ≤ 0.2V 2 mA Recommended operating conditions Unless Otherwise Noted, TA=0 to 65 °C) 1. VID is the magnitude of the difference between the input level on CK and the input level on CK 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same Note : AC INPUT OPERATING CONDITIONS Recommended operating conditions(Voltage referenced to VSS=0V, VDD=3.3V+ 5%, VDDQ=2.5V+ 5%,TA=0 to 65 °C) Parameter Symbol Min Typ Max Unit Note Input High (Logic 1) Voltage; DQ VIH VREF+0.35 - - V Input Low (Logic 0) Voltage; DQ VIL -- VREF-0.35 V Clock Input Differential Voltage; CK and CK VID 0.7 - VDDQ+0.6 V 1 Clock Input Crossing Point Voltage; CK and CK VIX 0.5*VDDQ-0.2 - 0.5*VDDQ+0.2 V 2 |
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