PHP191NQ06LT datasheet(5/13 Pages) PHILIPS

Part #	PHP191NQ06LT

Description	Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PHP/PHB191NQ06LT

N-channel TrenchMOS™ logic level FET

Product data

Rev. 01 — 05 May 2004

5 of 13

9397 750 13168

6.

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 250 µA; VGS =0V

Tj =25 °C

55

--V

Tj = −55 °C

50

--V

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS =VGS; Figure 9 and 10

Tj =25 °C

1

1.5

2

V

Tj = 175 °C

0.5

-

V

Tj = −55 °C

-

2.2

V

IDSS

drain-source leakage current

VDS =55V; VGS =0V

Tj =25 °C

--1

µA

Tj = 175 °C

-

500

µA

IGSS

gate-source leakage current

VGS = ±15 V; VDS = 0 V

-

2

100

nA

RDSon

drain-source on-state resistance

VGS = 10 V; ID =25A; Figure 7 and 8

Tj =25 °C

-

3.1

3.7

m

Ω

Tj = 175 °C

-

7.4

m

Ω

VGS =5V; ID =25A; Figure 7 and 8

-

3.5

4.2

m

Ω

VGS = 4.5 V; ID =25A; Figure 8

-

4.4

m

Ω

Dynamic characteristics

Qg(tot)

total gate charge

ID =25A; VDD =44V; VGS =5V; Figure 13

-

95.6

-

nC

Qgs

gate-source charge

-

17.2

-

nC

Qgd

gate-drain (Miller) charge

-

37.6

-

nC

Ciss

input capacitance

VGS =0V; VDS = 25 V; f = 1 MHz;

Figure 11

-7665

-pF

Coss

output capacitance

-

1045

-

pF

Crss

reverse transfer capacitance

-

465

-

pF

td(on)

turn-on delay time

VDD =30V; RL = 1.2 Ω;

VGS =5V; RG =10 Ω

-63

-

ns

tr

rise time

-

232

-

ns

td(off)

turn-off delay time

-

273

-

ns

tf

fall time

-

178

-

ns

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12

-

0.79

1.2

V

trr

reverse recovery time

IS = 20 A; dIS/dt = −100 A/µs; VGS =0V

-

78

-

ns

Qr

recovered charge

-

171

-

nC

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