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NZT6727 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. NZT6727
Description  PNP General Purpose Amplifier
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

NZT6727 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a=25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 1.0%
Thermal Characteristics T
a=25°C unless otherwise noted
* Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
-40
V
VCBO
Collector-Base Voltage
-50
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
- Continuous
-1.5
A
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Sustaining Voltage *
IC = -10mA, IB = 0
-40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = -1.0mA, IE = 0
-50
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = -100µA, IC = 0
-5.0
V
ICBO
Collector Cutoff Current
VCB = -50V, IE = 0
-0.1
µA
IEBO
Emitter Cut-off Current
VEB = -5.0V, IC = 0
-0.1
µA
On Characteristics
hFE
DC Current Gain
IC = -10mA, VCE = -1.0V
IC = -100mA, VCE = -1.0
IC = -1.0A, VCE = -1.0V
55
60
50
250
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -1.0A, IB = -100mA
-0.5
V
VBE(on)
Base-Emitter On Voltage
IC = -1.0A, VCE = -1.0V
-1.2
V
Small Signal Characteristics
hfe
Small Signal current Gain
IC = -50mA, VCE = -10V, f = 20MHz
2.5
25
Ccb
Collector-Base Capacitance
VCB = -10V, IE = 0, f = 1.0MHz
30
pF
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
1.0
8.0
W
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
125
°C/W
NZT6727
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collecor currents to 1.0A.
• Sourced from process 77.
1. Base 2. Collector 3. Emitter
SOT-223
1
2
4
3


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