IKW20N60T datasheet(4/15 Pages) INFINEON

Part #	IKW20N60T

Description	IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKP20N60T, IKB20N60T

TrenchStop Series

IKW20N60T

Power Semiconductors

4

Rev. 2.2 Dec-04

Switching Characteristic, Inductive Load, at Tj=175

°C

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

18

-

Rise time

tr

-

18

-

Turn-off delay time

td(off)

-

223

-

Fall time

tf

-

76

-

ns

Turn-on energy

Eon

-

0.51

-

Turn-off energy

Eoff

-

0.64

-

Total switching energy

Ets

Tj=175

°C,

VCC=400V,IC=20A,

VGE=0/15V,

RG= 12

Ω

Lσ

1) =131nH,

Cσ

1) =31pF

Energy losses include

“tail” and diode

reverse recovery.

-

1.15

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

-

176

-

ns

Diode reverse recovery charge

Qrr

-

1.46

-

µC

Diode peak reverse recovery current

Irrm

-

18.9

-

A

Diode peak rate of fall of reverse

recovery current during tb

dirr/dt

Tj=175

°C

VR=400V, IF=20A,

diF/dt=880A/

µs

-

467

-

A/

µs

1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

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