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IKW20N60T Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IKW20N60T Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 15 page IKP20N60T, IKB20N60T TrenchStop Series IKW20N60T Power Semiconductors 4 Rev. 2.2 Dec-04 Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 18 - Rise time tr - 18 - Turn-off delay time td(off) - 223 - Fall time tf - 76 - ns Turn-on energy Eon - 0.51 - Turn-off energy Eoff - 0.64 - Total switching energy Ets Tj=175 °C, VCC=400V,IC=20A, VGE=0/15V, RG= 12 Ω Lσ 1) =131nH, Cσ 1) =31pF Energy losses include “tail” and diode reverse recovery. - 1.15 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 176 - ns Diode reverse recovery charge Qrr - 1.46 - µC Diode peak reverse recovery current Irrm - 18.9 - A Diode peak rate of fall of reverse recovery current during tb dirr/dt Tj=175 °C VR=400V, IF=20A, diF/dt=880A/ µs - 467 - A/ µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E. |
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