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IS61LV12824 Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc

Part No. IS61LV12824
Description  128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61LV12824 Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc

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IS61LV12824
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ISSI®
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. D
06/22/05
CAPACITANCE(1)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 ns
-10 ns
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
ICC
Vcc Dynamic Operating
VCC = Max.,
Com.
210
180
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
240
210
ISB1
TTL Standby Current
VCC = Max.,
Com.
70
50
mA
(TTL Inputs)
VIN = VIH or VIL, f = max.
Ind.
80
55
CE1, CE2,
≥ VIH, CE2 ≤ VIL
ISB2
CMOS Standby
VCC = Max.,
Com.
10
10
mA
Current (CMOS Inputs)
CE1, CE2
≥ VCC – 0.2V,
Ind.
20
20
CE2
≤ 0.2V, VIN ≥ VCC – 0.2V,
or VIN
≤ 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3.0V
Input Rise and Fall Times
2 ns
Input and Output Timing
1.5V
and Reference Level
Output Load
See Figures 1 and 2
AC TEST LOADS
Figure 1
Figure 2
319
5 pF
Including
jig and
scope
353
OUTPUT
3.3V
OUTPUT
ZO = 50
1.5V
50


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