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IRFU3504PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFU3504PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRFR/U3504PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 30A, VGS = 0V trr Reverse Recovery Time ––– 53 80 ns TJ = 25°C, IF = 30A, VDD = 20V Qrr Reverse Recovery Charge ––– 86 130 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) S D G Source-Drain Ratings and Characteristics 87 350 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 7.8 9.2 m Ω VGS = 10V, ID = 30A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA gfs Forward Transconductance 40 ––– ––– S VDS = 10V, ID = 30A ––– ––– 20 µA VDS = 40V, VGS = 0V ––– ––– 250 VDS = 40V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Qg Total Gate Charge ––– 48 71 ID = 30A Qgs Gate-to-Source Charge ––– 12 18 nC VDS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– 13 20 VGS = 10V td(on) Turn-On Delay Time ––– 11 ––– VDD = 20V tr Rise Time ––– 53 ––– ID = 30A td(off) Turn-Off Delay Time ––– 36 ––– RG = 6.8Ω tf Fall Time ––– 22 ––– VGS = 10V LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 2150 ––– VGS = 0V Coss Output Capacitance ––– 580 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 46 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 2830 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 510 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 870 ––– VGS = 0V, VDS = 0V to 32V S D G IGSS ns IDSS Drain-to-Source Leakage Current |
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