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IKA10N60T Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # IKA10N60T
Description  IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKA10N60T Datasheet(HTML) 7 Page - Infineon Technologies AG

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IKA10N60T
TrenchStop Series
Power Semiconductors
7
Rev. 2 Oct-04
0A
5A
10A
15A
0,0m J
0,2m J
0,4m J
0,6m J
0,8m J
1,0m J
E
ts*
E
off
*) E
on a nd E tsin c lude lo sses
due to diode recovery
E
on*
10Ω
20Ω
30Ω
40Ω
50Ω
0,0 mJ
0,2 mJ
0,4 mJ
0,6 mJ
0,8 mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 23Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
50°C
100°C
150°C
0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
0,5mJ
0,6mJ
E
ts*
E
on*
*) E
on an d E ts in clude lo sses
due to diode recovery
E
off
300V 350V 400V 450V 500V 550V
0,0m J
0,2m J
0,4m J
0,6m J
0,8m J
E
ts*
E
on*
*) E
on a nd E ts in clu de lo s s e s
due to diode recovery
E
off
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, RG = 23Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 10A, RG = 23Ω,
Dynamic test circuit in Figure E)


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