K6F2016V4E-EF70 datasheet(9/9 Pages) SAMSUNG

Part #	K6F2016V4E-EF70

Description	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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9 / 9 page

CMOS SRAM

K6F2016V4E Family

- 9 -

Revision 1.0

March 2002

PACKAGE DIMENSION

6

5

4

3

2

1

A

B

C

D

E

F

G

H

B/2

B

Bottom View

Top View

D

C

Side View

A

Y

Detail A

Min

Typ

Max

A

-

0.75

-

B

5.90

6.00

6.10

B1

-

3.75

-

C

6.90

7.00

7.10

C1

-

5.25

-

D

0.40

0.45

0.50

E

0.80

0.90

1.00

E1

-

0.55

-

E2

0.30

0.35

0.40

Y

-

0.08

B1

#A1

Notes.

1. Bump counts: 48(8 row x 6 column)

2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.)

3. All tolerence are

±0.050 unless

otherwise specified.

4. Typ: Typical

5. Y is coplanarity: 0.08(Max)

Unit: millimeters

48 TAPE BALL GRID ARRAY(0.75mm ball pitch)

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K6F2016V4E-EF70 Datasheet(PDF) 9 Page - Samsung semiconductor

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