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K6F2016V4E Datasheet(PDF) 3 Page - Samsung semiconductor

Part No. K6F2016V4E
Description  128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6F2016V4E Datasheet(HTML) 3 Page - Samsung semiconductor

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CMOS SRAM
K6F2016V4E Family
- 3 -
Revision 1.0
March 2002
ABSOLUTE MAXIMUM RATINGS1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions longer than 1seconds may affect reliability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.2 to VCC+0.3V
V
Voltage on Vcc supply relative to Vss
VCC
-0.2 to 4.0V
V
Power Dissipation
PD
1.0
W
Storage temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
-40 to 85
°C
FUNCTIONAL DESCRIPTION
1. X means don
′t care.(Must be low or high state.)
CS
OE
WE
LB
UB
I/O1~8
I/O9~16
Mode
Power
H
X1)
X1)
X1)
X1)
High-Z
High-Z
Deselected
Standby
X1)
X1)
X1)
H
H
High-Z
High-Z
Deselected
Standby
L
H
H
L
X1)
High-Z
High-Z
Output Disabled
Active
L
H
H
X1)
L
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X1)
L
L
L
Din
Din
Word Write
Active
PRODUCT LIST
Industrial Temperature Products(-40~85
°C)
Part Name
Function
K6F2016V4E-EF55
K6F2016V4E-EF70
48-TBGA, 55ns, 3.3V
48-TBGA, 70ns, 3.3V


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