Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

K6F2016V4E Datasheet(PDF) 8 Page - Samsung semiconductor

Part No. K6F2016V4E
Description  128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6F2016V4E Datasheet(HTML) 8 Page - Samsung semiconductor

  K6F2016V4E Datasheet HTML 1Page - Samsung semiconductor K6F2016V4E Datasheet HTML 2Page - Samsung semiconductor K6F2016V4E Datasheet HTML 3Page - Samsung semiconductor K6F2016V4E Datasheet HTML 4Page - Samsung semiconductor K6F2016V4E Datasheet HTML 5Page - Samsung semiconductor K6F2016V4E Datasheet HTML 6Page - Samsung semiconductor K6F2016V4E Datasheet HTML 7Page - Samsung semiconductor K6F2016V4E Datasheet HTML 8Page - Samsung semiconductor K6F2016V4E Datasheet HTML 9Page - Samsung semiconductor  
Zoom Inzoom in Zoom Outzoom out
 8 / 9 page
background image
CMOS SRAM
K6F2016V4E Family
- 8 -
Revision 1.0
March 2002
Address
CS
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB Controlled)
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB
or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi-
tion when CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the CS going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends with CS or WE going high.
tWC
tCW(2)
tBW
tWP(1)
tDH
tDW
tWR(4)
tAW
DATA RETENTION WAVE FORM
CS or LB/UB controlled
VCC
3.0V
2.2V
VDR
CS or LB/UB
GND
Data Retention Mode
CS
≥VCC-0.2V or LB=UB≥Vcc-0.2V
tSDR
tRDR
tAS(3)


Similar Part No. - K6F2016V4E

ManufacturerPart No.DatasheetDescription
Samsung semiconductor
Samsung semiconductor
K6F2016R4G SAMSUNG-K6F2016R4G Datasheet
163Kb / 10P
   2Mb(128K x 16 bit) Low Power SRAM
K6F2016R4G-F SAMSUNG-K6F2016R4G-F Datasheet
163Kb / 10P
   2Mb(128K x 16 bit) Low Power SRAM
K6F2016R4G-FF70 SAMSUNG-K6F2016R4G-FF70 Datasheet
163Kb / 10P
   2Mb(128K x 16 bit) Low Power SRAM
K6F2016R4G-FF85 SAMSUNG-K6F2016R4G-FF85 Datasheet
163Kb / 10P
   2Mb(128K x 16 bit) Low Power SRAM
K6F2016R4G-XF70 SAMSUNG-K6F2016R4G-XF70 Datasheet
163Kb / 10P
   2Mb(128K x 16 bit) Low Power SRAM
More results

Similar Description - K6F2016V4E

ManufacturerPart No.DatasheetDescription
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
EM621FU16 EMLSI-EM621FU16 Datasheet
72Kb / 11P
   128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM620FU16 EMLSI-EM620FU16 Datasheet
74Kb / 11P
   128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung semiconductor
Samsung semiconductor
DS_K6F2016U4E SAMSUNG-DS_K6F2016U4E Datasheet
158Kb / 9P
   128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2016U4D SAMSUNG-K6F2016U4D Datasheet
117Kb / 9P
   128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2016U4E SAMSUNG-K6F2016U4E Datasheet
158Kb / 9P
   128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
EM620FV16B EMLSI-EM620FV16B Datasheet
434Kb / 11P
   128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
EM621FU16BU EMLSI-EM621FU16BU Datasheet
362Kb / 11P
   128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
EM620FU16B EMLSI-EM620FU16B Datasheet
390Kb / 11P
   128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
List of Unclassifed Manufacturers
List of Unclassifed Man...
EM620FV16B ETC2-EM620FV16B Datasheet
434Kb / 11P
   128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
EM621FV16BU EMLSI-EM621FV16BU Datasheet
379Kb / 11P
   128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
More results


Html Pages

1  2  3  4  5  6  7  8  9 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz