Electronic Components Datasheet Search |
|
K6F2016V4E Datasheet(PDF) 6 Page - Samsung semiconductor |
|
K6F2016V4E Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 9 page CMOS SRAM K6F2016V4E Family - 6 - Revision 1.0 March 2002 Address Data Out Previous Data Valid Data Valid TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, UB or/and LB=VIL) TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) Data Valid High-Z tRC CS Address UB, LB OE Data out tAA tRC tOH tOH tAA tCO tBA tOE tOLZ tBLZ tLZ tOHZ tBHZ tHZ NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. |
Similar Part No. - K6F2016V4E |
|
Similar Description - K6F2016V4E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |