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K6F2016V4E Datasheet(PDF) 4 Page - Samsung semiconductor

Part No. K6F2016V4E
Description  128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6F2016V4E Datasheet(HTML) 4 Page - Samsung semiconductor

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CMOS SRAM
K6F2016V4E Family
- 4 -
Revision 1.0
March 2002
DC AND OPERATING CHARACTERISTICS
1. Typical values are measured at VCC=3.3V, TA=25
°C and not 100% tested.
Item
Symbol
Test Conditions
Min
Typ1)
Max
Unit
Input leakage current
ILI
VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO
CS=VIH or OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1
µA
Average operating current
ICC1
Cycle time=1
µs, 100%duty, IIO=0mA, CS≤0.2V,
LB
≤0.2V or/and UB≤0.2V, VIN≤0.2V or VIN≥VCC-0.2V
-
-
4
mA
ICC2
Cycle time=Min, IIO=0mA, 100% duty, CS=VIL,
LB=VIL or/and UB=VIL, VIN=VIL or VIH
-
-
40
mA
Output low voltage
VOL
IOL = 2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH = -1.0mA
2.4
-
-
V
Standby Current (CMOS)
ISB1
Other input =0~Vcc
1) CS
≥Vcc-0.2V(CS controlled) or
2) LB=UB
≥Vcc-0.2V, CS≤0.2V(LB/UB controlled)
-
0.5
10
µA
RECOMMENDED DC OPERATING CONDITIONS1)
Note:
1. TA=-40 to 85
°C, otherwise specified.
2. Overshoot: Vcc+2.0V in case of pulse width
≤20ns.
3. Undershoot: -2.0V in case of pulse width
≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
3.0
3.3
3.6
V
Ground
Vss
0
0
0
V
Input high voltage
VIH
2.2
-
Vcc+0.22)
V
Input low voltage
VIL
-0.23)
-
0.6
V
CAPACITANCE1) (f=1MHz, TA=25
°C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Output capacitance
CIO
VIO=0V
-
10
pF


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