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M5M28F101AFP Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor

Part No. M5M28F101AFP
Description  1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M5M28F101AFP Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI LSIs
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
M5M28F101AFP,J,VP,RV-85,-10
(970407)
5
DC ELECTRICAL CHARACTERISTICS (Ta = 0~70°C, Vcc = 5V±0.5V, unless otherwise noted)
ILI
ILO
ISB1
Symbol
Parameter
Max
10
Typ
Limits
Min
Test conditions
Unit
Input leakage current
Output leakage current
VCC stand-by current
VCC = 5.5V, CE = VIH
ISB2
ICC1
µA
100
30
100
Vcc+0.5
VCC active read current
VPP read current
VCC = 5.5V, CE = VCC±0.2V
VCC = 5.5V, CE = VIL, f = 11.8MHz, IOUT = 0mA
VPP = VPPH
0.8
30
30
100
ICC2
ICC3
IPP1
IPP2
IPP3
VIL
VIH
VOL
VOH1
VOH2
VPPL
VPPH
VCC program current
VCC erase current
VPP program current
VPP erase current
Input low voltage
Input high voltage
Output low voltage
Output high voltage
VPP voltage during read-only mode
VPP voltage during read/write mode
µA
mA
µA
mA
mA
mA
µA
mA
mA
V
V
V
V
V
V
0V
≤VIN≤VCC
0V
≤VOUT≤VCC
VPP = VPPH
0V
≤VPP≤VCC
VCC<VPP
≤6.5V
VPP = VPPH
VPP = VPPH
VPP = VPPH
IOL = 5.8mA
IOH = –2.5mA
IOH = –100µA
10
1
30
30
10
0.45
6.5
12.6
12.0
11.4
0
Vcc–0.4
2.0
– 0.5
Read-Only Mode
tRC
ta (AD)
ta (CE)
ta (OE)
tCLZ
tOLZ
tDF
tOH
tWRR
Read cycle time
Address access time
Chip enable access time
Output enable access time
Chip enable to output in low Z
Output enable to output in low Z
Output enable high to output in low Z
Output hold from CE, OE, addresses
Write recovery time before read
ns
ns
ns
ns
ns
ns
ns
ns
µs
6
25
0
100
100
100
50
0
0
25
0
85
85
85
45
0
0
6
Symbol
Parameter
Unit
Max
Min
Max
Min
Limits
M5M28F101A-85 M5M28F101A-10
AC ELECTRICAL CHARACTERISTICS (Ta = 0~70°C, Vcc = 5V±0.5V, unless otherwise noted)
Note 4 : VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP.
Timing measurements are made under AC WAVEFORMS FOR READ OPERATIONS.
2.4
tAVAV
tAVQV
tELQV
tGLQV
tELQX
tGLQX
tGHQZ
tOH
tWHGL


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