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M5M28F101AFP Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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M5M28F101AFP Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
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5 / 10 page  MITSUBISHI LSIs 1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY M5M28F101AFP,J,VP,RV-85,-10 (970407) 5 DC ELECTRICAL CHARACTERISTICS (Ta = 0~70°C, Vcc = 5V±0.5V, unless otherwise noted) ILI ILO ISB1 Symbol Parameter Max 10 Typ Limits Min Test conditions Unit Input leakage current Output leakage current VCC stand-by current VCC = 5.5V, CE = VIH ISB2 ICC1 µA 100 30 100 Vcc+0.5 VCC active read current VPP read current VCC = 5.5V, CE = VCC±0.2V VCC = 5.5V, CE = VIL, f = 11.8MHz, IOUT = 0mA VPP = VPPH 0.8 30 30 100 ICC2 ICC3 IPP1 IPP2 IPP3 VIL VIH VOL VOH1 VOH2 VPPL VPPH VCC program current VCC erase current VPP program current VPP erase current Input low voltage Input high voltage Output low voltage Output high voltage VPP voltage during read-only mode VPP voltage during read/write mode µA mA µA mA mA mA µA mA mA V V V V V V 0V ≤VIN≤VCC 0V ≤VOUT≤VCC VPP = VPPH 0V ≤VPP≤VCC VCC<VPP ≤6.5V VPP = VPPH VPP = VPPH VPP = VPPH IOL = 5.8mA IOH = –2.5mA IOH = –100µA 10 1 30 30 10 0.45 6.5 12.6 12.0 11.4 0 Vcc–0.4 2.0 – 0.5 Read-Only Mode tRC ta (AD) ta (CE) ta (OE) tCLZ tOLZ tDF tOH tWRR Read cycle time Address access time Chip enable access time Output enable access time Chip enable to output in low Z Output enable to output in low Z Output enable high to output in low Z Output hold from CE, OE, addresses Write recovery time before read ns ns ns ns ns ns ns ns µs 6 25 0 100 100 100 50 0 0 25 0 85 85 85 45 0 0 6 Symbol Parameter Unit Max Min Max Min Limits M5M28F101A-85 M5M28F101A-10 AC ELECTRICAL CHARACTERISTICS (Ta = 0~70°C, Vcc = 5V±0.5V, unless otherwise noted) Note 4 : VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP. Timing measurements are made under AC WAVEFORMS FOR READ OPERATIONS. 2.4 tAVAV tAVQV tELQV tGLQV tELQX tGLQX tGHQZ tOH tWHGL |
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