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M5M28F101AFP Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. M5M28F101AFP
Description  1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M5M28F101AFP Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI LSIs
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
M5M28F101AFP,J,VP,RV-85,-10
(970407)
3
When VPP is low (VPP = V PPL), the contents of the command latch
are fixed to 00H, and the device is in read-only mode. When VPP is
high (VPP = VPPH), the device enters read/write mode. The device
operations are selected by writing specific software command into
the command latch.
Read Command
The device is in read mode after writing Read Command (00H) to
the command latch. The device continues to be in read mode until
the other commands are written. When VPP powers-up to high
voltage (VPP = VPPH), the default contents of the command latch is
00H. So it is ensured that the false alteration of memory data does
not occur during VPP power transition.
Program Command
Program Command is the command for byte-program, and
program is initiated by twice of write cycles. Program Command
(40H) is written to the command latch in first write cycle, and the
address and data to be programmed are latched in second write
cycle. Then the address and data are latched on the falling edge
and the rising edge of WE pulse, respectively. The byte- program
operation is initiated at the rising edge of WE in second write
cycle, and terminates in 10 µs, controlled by the internal timer.
Program Verify Command
Following byte program, the programmed byte must be verified.
The program-verify is initiated by writing Program Verify Command
(C0H) to the command latch. After writing Program Verify
Command, programmed data is verified in read mode. Then the
address information is not needed.
Auto Program Command
Auto Program Command is the command for automated program
and program-verify of one byte, and Auto Program is initiated by
twice of write cycles.
Auto Program Command (10H or 50H) is written to the command
latch in first write cycle, and the address and data to be
programmed are latched in second write cycle. Then the address
and data are latched on the falling edge and the rising edge of WE
pulse, respectively. The program operation is initiated at the rising
edge of WE in second write cycle, and program-verify begin auto-
matically. So it is not necessary to program-verify mode after this.
And the complete of Auto Program can be indicated by data
polling.
Data polling is the indication of the complete of Auto Program.
During the Auto Program, on WE=VIH and CE=OE=VIL , the data of
D0~D7 are the inverse of written datum. When Auto Program is
completed, the written datum will be output. It is necessary to fix
the address of written byte during data polling.
Erase Command
Erase Command is the command for chip-erase, and chip-erase is
initiated
by
writing
twice
of
the
Erase
Command
(20H)
consecutively to the command latch. The erase operation is
initiated with the rising edge of the WE pulse and terminates in
9.5ms, controlled by the internal timer. This two-step sequence for
chip-erase prevents from erasing accidentally.
Erase Verify Command
Following each erase, all bytes must be verified. The erase verify
is initiated by writing Erase Verify Command (A0H) to the
command latch, while the address to be verified is latched on the
falling edge of the WE pulse. The erase verify command must be
written to the command latch and each address is latched before
each byte is verified. The operation continues for each byte until a
byte is not erased, or the last address is accessed.
Auto Erase Command
Auto Erase Command is the command for automated erase and
erase-verify of all bytes, and Auto Erase is initiated by twice of the
Erase Command (30H) consecutively to the command latch. First,
the preprogram operation is initiated at the rising edge of WE in
second write cycle, and so all byte become zero data. Second,
erase and erase-verify begin, automatically. So it is not necessary
to preprogram and erase-verify mode. And the complete of Auto
Erase can be indicated by status polling.
Status polling is the indication of the complete of Auto Erase.
During the Auto Erase, on WE=VIH and CE=OE=VIL , the data of
D7 is "0". When Auto Erase is completed, the data of D7 is "1".
(D0~D7 are "FFH". )
Reset Command
Reset Command is the command to safely abort the erase or
program sequences. Following erase or program command in first
write cycle, the operation is aborted safely by writing the two
consecutive Reset Commands (FFH). Then the device enters read
mode without altering memory contents.
Read Device Identifier Code
Device Identifier operation is initiated by writing 80H into the
command latch. Following the command write, the manufacturer
code (1CH) and the device code (D9H) can be read from address-
00000H and 00001H, respectively.
The M5M28F101A is supported with the Common Device
Identifier Code of MITSUBISHI 1M Flash memory (x8) family.
Common Device Identifier operation is initiated by writing 90H into
the command latch. Under this case, following the command write,
the manufacturer code (1CH) and the device code (D0H) can be
read from address-00000H and 00001H, respectively. Additionally,
Common Device Identifier operation is initiated by rising A9 to high
voltage for PROM programmers.
SOFTWARE COMMAND


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