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M5M28F101AFP Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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M5M28F101AFP Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 10 page  MITSUBISHI LSIs 1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY M5M28F101AFP,J,VP,RV-85,-10 (970407) 3 When VPP is low (VPP = V PPL), the contents of the command latch are fixed to 00H, and the device is in read-only mode. When VPP is high (VPP = VPPH), the device enters read/write mode. The device operations are selected by writing specific software command into the command latch. Read Command The device is in read mode after writing Read Command (00H) to the command latch. The device continues to be in read mode until the other commands are written. When VPP powers-up to high voltage (VPP = VPPH), the default contents of the command latch is 00H. So it is ensured that the false alteration of memory data does not occur during VPP power transition. Program Command Program Command is the command for byte-program, and program is initiated by twice of write cycles. Program Command (40H) is written to the command latch in first write cycle, and the address and data to be programmed are latched in second write cycle. Then the address and data are latched on the falling edge and the rising edge of WE pulse, respectively. The byte- program operation is initiated at the rising edge of WE in second write cycle, and terminates in 10 µs, controlled by the internal timer. Program Verify Command Following byte program, the programmed byte must be verified. The program-verify is initiated by writing Program Verify Command (C0H) to the command latch. After writing Program Verify Command, programmed data is verified in read mode. Then the address information is not needed. Auto Program Command Auto Program Command is the command for automated program and program-verify of one byte, and Auto Program is initiated by twice of write cycles. Auto Program Command (10H or 50H) is written to the command latch in first write cycle, and the address and data to be programmed are latched in second write cycle. Then the address and data are latched on the falling edge and the rising edge of WE pulse, respectively. The program operation is initiated at the rising edge of WE in second write cycle, and program-verify begin auto- matically. So it is not necessary to program-verify mode after this. And the complete of Auto Program can be indicated by data polling. Data polling is the indication of the complete of Auto Program. During the Auto Program, on WE=VIH and CE=OE=VIL , the data of D0~D7 are the inverse of written datum. When Auto Program is completed, the written datum will be output. It is necessary to fix the address of written byte during data polling. Erase Command Erase Command is the command for chip-erase, and chip-erase is initiated by writing twice of the Erase Command (20H) consecutively to the command latch. The erase operation is initiated with the rising edge of the WE pulse and terminates in 9.5ms, controlled by the internal timer. This two-step sequence for chip-erase prevents from erasing accidentally. Erase Verify Command Following each erase, all bytes must be verified. The erase verify is initiated by writing Erase Verify Command (A0H) to the command latch, while the address to be verified is latched on the falling edge of the WE pulse. The erase verify command must be written to the command latch and each address is latched before each byte is verified. The operation continues for each byte until a byte is not erased, or the last address is accessed. Auto Erase Command Auto Erase Command is the command for automated erase and erase-verify of all bytes, and Auto Erase is initiated by twice of the Erase Command (30H) consecutively to the command latch. First, the preprogram operation is initiated at the rising edge of WE in second write cycle, and so all byte become zero data. Second, erase and erase-verify begin, automatically. So it is not necessary to preprogram and erase-verify mode. And the complete of Auto Erase can be indicated by status polling. Status polling is the indication of the complete of Auto Erase. During the Auto Erase, on WE=VIH and CE=OE=VIL , the data of D7 is "0". When Auto Erase is completed, the data of D7 is "1". (D0~D7 are "FFH". ) Reset Command Reset Command is the command to safely abort the erase or program sequences. Following erase or program command in first write cycle, the operation is aborted safely by writing the two consecutive Reset Commands (FFH). Then the device enters read mode without altering memory contents. Read Device Identifier Code Device Identifier operation is initiated by writing 80H into the command latch. Following the command write, the manufacturer code (1CH) and the device code (D9H) can be read from address- 00000H and 00001H, respectively. The M5M28F101A is supported with the Common Device Identifier Code of MITSUBISHI 1M Flash memory (x8) family. Common Device Identifier operation is initiated by writing 90H into the command latch. Under this case, following the command write, the manufacturer code (1CH) and the device code (D0H) can be read from address-00000H and 00001H, respectively. Additionally, Common Device Identifier operation is initiated by rising A9 to high voltage for PROM programmers. SOFTWARE COMMAND |
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