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IXTT2N170D2 Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXTT2N170D2
Description  Depletion Mode MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTT2N170D2 Datasheet(HTML) 1 Page - IXYS Corporation

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Symbol
Test Conditions
Maximum Ratings
V
DSX
T
J
= 25
C to 150C
1700
V
V
DGX
T
J
= 25
C to 150C, R
GS = 1M
1700
V
V
GSX
Continuous
20
V
V
GSM
Transient
30
V
P
D
T
C = 25C
568
W
T
J
- 55 ... +150
C
T
JM
150
C
T
stg
- 55 ... +150
C
T
L
1.6mm (0.062 in.) from Case for 10s
300
C
T
SOLD
Plastic Body for 10s
260
C
M
d
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in.
Weight
TO-268
4
g
TO-247
6
g
DS100418C(3/17)
Symbol
Test Conditions
Characteristic Values
(T
J = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSX
V
GS = - 5V, ID = 250A
1700
V
V
GS(off)
V
DS = 25V, ID = 250A
- 2.5
- 4.5
V
I
GSX
V
GS = 20V, VDS = 0V
100 nA
I
DSX(off)
V
DS = VDSX, VGS = - 5V
25
A
T
J = 125C
500
A
R
DS(on)
V
GS = 0V, ID = 1A, Note 1
6.5
I
D(on)
V
GS = 0V, VDS = 50V, Note 1
2
A
Depletion Mode
MOSFET
N-Channel
IXTT2N170D2
IXTH2N170D2
V
DSX
=
1700V
I
D(on)
>
2A
R
DS(on)

6.5
Features
• Normally ON Mode
 International Standard Packages
• Molding Epoxies Meet UL94V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
G = Gate
D
= Drain
S = Source
Tab = Drain
TO-247 (IXTH)
G
S
D (Tab)
D
TO-268 (IXTT)
S
G
D (Tab)


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