EDS2532AABJ-6B datasheet(4/48 Pages) ELPIDA

Part #	EDS2532AABJ-6B

Description	256M bits SDRAM (8M words 짰32 bits)

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Manufacturer	ELPIDA [Elpida Memory]

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EDS2532AABJ-6B

Data Sheet E0509E30 (Ver. 3.0)

4

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, execute power up sequence and initialization sequence before proper device operation is achieved

(refer to the Power up sequence).

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Note

Voltage on any pin relative to VSS

VT

–0.5 to VDD + 0.5 (≤ 4.6 (max.))

V

Supply voltage relative to VSS

VDD

–0.5 to +4.6

V

Short circuit output current

IOS

50

mA

Power dissipation

PD

1.0

W

Operating temperature

TA

0 to +70

°C

Storage temperature

Tstg

–55 to +125

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended DC Operating Conditions (TA = 0 to +70

°C)

Parameter

Symbol

min.

max.

Unit

Notes

Supply voltage

VDD, VDDQ

3.0

3.6

V

1

VSS, VSSQ

0

V

2

Input high voltage

VIH

2.0

VDD + 0.3

V

3

Input low voltage

VIL

–0.3

0.8

V

4

Notes: 1. The supply voltage with all VDD and VDDQ pins must be on the same level.

2. The supply voltage with all VSS and VSSQ pins must be on the same level.

3. VIH (max.) = VDD + 1.5V (pulse width ≤ 5ns).

4. VIL (min.) = VSS – 1.5V (pulse width ≤ 5ns).

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EDS2532AABJ-6B Datasheet(PDF) 4 Page - Elpida Memory

EDS2532AABJ-6B Datasheet(HTML) 4 Page - Elpida Memory

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