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VUB60 Datasheet(PDF) 2 Page - IXYS Corporation

Part No. VUB60
Description  Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

VUB60 Datasheet(HTML) 2 Page - IXYS Corporation

  VUB60 Datasheet HTML 1Page - IXYS Corporation VUB60 Datasheet HTML 2Page - IXYS Corporation VUB60 Datasheet HTML 3Page - IXYS Corporation VUB60 Datasheet HTML 4Page - IXYS Corporation  
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VUB 60
I
R
V
R
= V
RRM,TVJ =25°C
0.2
mA
V
R
= 800 V, T
VJ = 150°C6
mA
V
F
I
F
= 12 A,
T
VJ =25°C
2.7
V
V
T0
For power-loss calculations only
1.65
V
r
T
T
VJ
= 150
°C46 mW
I
RM
I
F
= 25 A,
-di
F/dt = 100 A/ms
6.5
7
A
V
R
= 100 V
t
rr
I
F
= 1 A,
-di
F/dt = 100 A/ms50
70
ns
V
R
= 30 V
R
thJH
3.12 K/W
R
25
Siemens Typ S 891/2,2k/+9
2.2
k
W
d
S
Creep distance on surface
12.7 mm
d
A
Strike distance in air
9.4 mm
a
Maximum allowable acceleration
50 m/s2
Symbol
Test Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
BR(CES)
V
GS = 0 V, IC = 3 mA
1200
V
V
GE(th)
I
C = 10 mA
5
7.5
V
I
GES
V
GE
=
± 20 V
500
nA
I
CES
T
VJ = 25°C,
V
CE = 800 V
250
mA
T
VJ = 125°C,
V
CE = 800 V
1
mA
V
CEsat
V
GE = 15 V, IC = 25 A
3.5
V
t
SC
V
GE = 15 V, VCE = 600 V, TVJ = 125°C,
10
ms
(SCSOA)
R
G = 4.7 W, non repetitive
RBSOA
V
GE = 15 V, VCE = 800 V, TVJ = 125°C,
50
A
R
G = 4.7 W, Clamped Inductive load, L = 100 mH
C
ies
V
CE = 25 V, f = 1 MHz, VGE = 0 V
2.85
nF
t
d(on)
100
ns
t
d(off)
220
ns
t
fi
1600
ns
E
on
3.5
mJ
E
off
12
mJ
R
thJH
1 K/W
I
R
V
R = VRRM,TVJ =25°C
0.1
mA
V
R = VRRM,TVJ = 150°C3
mA
V
F
I
F = 25 A,
T
VJ =25°C
1.3
V
V
T0
For power-loss calculations only
0.85
V
r
T
T
VJ = 150°C
8.5
m
W
R
thJH
per diode
1.42 K/W
110
10
100
1000
10000
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
60
70
80
V
F
A
I
F
0.001
0.01
0.1
1
0
100
200
300
400
500
V
s
t
V
R= 0.8VRRM
T
VJ= 45°C
T
VJ= 150°C
I
2t
A2s
A
I
FSM
ms
t
V
R= 0 V
T
VJ= 25°C
T
VJ=150°C
max.
T
VJ= 150°C
T
VJ= 45°C
typ.
Fig. 3 I2t versus time per rectifier diode
Fig. 2 Surge overload current per
rectifier diode
Fig. 1 Forward current versus voltage
drop per rectifier diode
V
CE = 600 V, IC = 25 A
V
GE = 15 V, RG = 4.7 W
Inductive load; L = 100
mH
T
VJ = 125°C


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