MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET

MICROWAVE

MICROWAVE

MICROWAVE

MICROWAVE SEMICONDUCTOR

SEMICONDUCTOR

SEMICONDUCTOR

SEMICONDUCTOR

TIM4450-4UL

TIM4450-4UL

TIM4450-4UL

TIM4450-4UL

TECHNICAL DATA

TECHNICAL DATA

TECHNICAL DATA

TECHNICAL DATA

FEATURES

FEATURES

FEATURES

FEATURES

HIGH POWER

BROAD BAND INTERNALLY MATCHED

P1dB=36.5dBm at 4.4GHz to 5.0GHz

HIGH GAIN

HERMETICALLY SEALED PACKAGE

G1dB=11.0dB at 4.4GHz to 5.0GHz

RF PERFORMANCE SPECIFICATIONS

( Ta= 25

°°°°C )

CHARACTERISTICS

SYMBOL

CONDITION

UNIT MIN. TYP. MAX.

Output Power at 1dB

Compression Point

dBm

35.5

36.5



Power Gain at 1dB

Compression Point

dB

10.0

11.0



Drain Current

A



1.1

1.3

Gain Flatness

∆GdB



±0.6

Power Added Efficiency

%



37



3rd Order Intermodulation

Distortion

dBc

-44

-47



Drain Current

Two Tone Test

Po= 25.5dBm

(Single Carrier Level)

A



1.1

1.3

Channel Temperature Rise

∆Tch

°C



80

ELECTRICAL CHARACTERISTICS

( Ta= 25

°°°°C )

CHARACTERISTICS

SYMBOL

CONDITION

UNIT MIN. TYP. MAX.

Transconductance

gm

mS



900



Pinch-off Voltage

V

-1.0

-2.5

-4.0

Saturated Drain Current

A



2.6

3.5

Gate-Source Breakdown

Voltage

µAV

-5



Thermal Resistance

°C/W



4.5

6.0

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Apr. 2000