Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised January 15, 2001

Page 3

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

PRODUCT INFORMATION

Figure 2

Chip Layout and Bond

Pad Locations

Chip Size is 4.67 mm x

2.0 mm x 100

µm. Back

of chip is RF and DC

ground

Dimensions in mm

0.0

4.67

1.50

1.23

0.11

2.35

3.22

3.84

2.44

3.16

4.15

4.57

0.0

2.00

1.06

0.83

0.60

Figure 3

Recommended

Application Schematic

Circuit Diagram

Note: For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used

to measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.

L

Drain Supply

Vd = +5 V

100pF

100pF

10,000pF

L

LL

100pF

100pF

10,000pF

L

L

L

L

L

L

L = Bond Wire Inductance

Ground

(Back of Chip)

MMIC Chip

RF OUT

RF IN

100pF

10,000pF

Gate Supply

Vg

10,000pF

L

LL

L

L

L

L

L

100pF

100pF

100pF

L

L

RMDA1840

18-40 GHz Broad Band Driver Amplifier

MMIC