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PM300CSE060 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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PM300CSE060 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 6 page  MITSUBISHI <INTELLIGENT POWER MODULES> PM300CSE060 FLAT-BASE TYPE INSULATED PACKAGE Sep. 2001 Parameter Symbol Supply Voltage Protected by OC & SC Supply Voltage (Surge) Module Case Operating Temperature Storage Temperature Isolation Voltage Condition VCC(surge) TC Tstg Viso Ratings VCC(PROT) 400 500 –20 ~ +100 –40 ~ +125 2500 Unit V °C °C Vrms V VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125 °C Start Applied between : P-N, Surge value or without switching (Note-1) 60Hz, Sinusoidal, Charged part to Base, AC 1 min. (Note-1) Tc measurement point is as shown below. (Base plate depth 3mm) TOTAL SYSTEM Tc 63mm U VW 2.3 2.3 3.3 2.0 0.3 1.0 2.9 1.2 1 10 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current –IC = 300A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25 °C Tj = 125 °C ELECTRICAL CHARACTERISTICS (Tj = 25 °C, unless otherwise noted) INVERTER PART Parameter Symbol Test Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits — — — 0.4 — — — — — — 1.7 1.7 2.2 0.8 0.15 0.4 2.0 0.6 — — Tj = 25 °C Tj = 125 °C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 15V ↔0V VCC = 300V, IC = 300A Tj = 125 °C Inductive Load (upper and lower arm) (Fig. 3) VCE = VCES, VCIN = 15V (Fig. 4) VD = 15V, IC = 300A VCIN = 0V, Pulsed (Fig. 1) V mA V µs Unit °C/W Rth(j-c)Q Rth(j-c)F Rth(j-c’)Q Rth(j-c’)F Rth(c-f) Inverter IGBT part (per 1 element), (Note-1) Inverter FWDi part (per 1 element), (Note-1) Inverter IGBT part (per 1 element), (Note-2) Inverter FWDi part (per 1 element), (Note-2) Case to fin, Thermal grease applied (per 1 module) Symbol Parameter Test Condition Unit Min. Typ. Max. Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance (Note-2) TC measurement point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. 0.16 0.24 0.10 0.16 0.018 — — — — — — — — — — Limits |
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