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PHP45NQ15T Datasheet(PDF) 2 Page - NXP Semiconductors |
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PHP45NQ15T Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 13 page 9397 750 14012 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 8 November 2004 2 of 13 Philips Semiconductors PHP/PHB45NQ15T N-channel TrenchMOS™ standard level FET 3. Ordering information 4. Limiting values Table 2: Ordering information Type number Package Name Description Version PHP45NQ15T TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead TO-220AB SOT78 PHB45NQ15T D2-PAK Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead cropped) SOT404 Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 175 °C - 150 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 175 °C; RGS =20kΩ - 150 V VGS gate-source voltage (DC) - ±20 V ID drain current (DC) Tmb =25 °C; VGS =10V; Figure 2 and 3 - 45.1 A Tmb = 100 °C; VGS =10V; Figure 2 - 31.9 A IDM peak drain current Tmb =25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 90.2 A Ptot total power dissipation Tmb =25 °C; Figure 1 - 230 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode IS source (diode forward) current (DC) Tmb =25 °C - 45.1 A ISM peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 µs - 90.2 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy unclamped inductive load; ID = 19.1 A; tp = 0.1 ms; VDD ≤ 150 V; RGS =50 Ω; VGS = 10 V; starting at Tj =25 °C - 180 mJ |
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