PDM1405HA datasheet(3/3 Pages) NIEC

Part #	PDM1405HA

Description	MOSFET MODULE Dual 140A/500V

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Manufacturer	NIEC [Nihon Inter Electronics Corporation]

Direct Link	http://www.niec.co.jp

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240

200

160

120

80

40

0

02468

10

12

DRAIN TO SOURCE VOLTAGE VDS (V)

TC=25ı 250 s Pulse Test

VGS=10V

8V

7V

6V

5V

Fig. 1 Typical Output Characteristics

36

30

24

18

12

6

0

1

2

5

10

20

50

100

DRAIN TO SOURCE VOLTAGE VDS (V)

VGS=0V f=1MHz

Ciss

Fig. 4 Typical Capacitance

Fig. 4 Vs. Drain-Source Voltage

1000

500

100

200

50

20

10

2

5

10

20

50

200

100

RG=5

VDD=250V TC=25ı 80 s Pulse Test

DRAIN CURRENT ID (A)

td(off)

td(on)

tr

tf

Fig. 7 Typical Switching Time

Fig. 7 Vs. Drain Current

500

50

200

100

20

10

5

1

2

0.5

1

2

5

10

20

50 100

500

200

1000

DRAIN TO SOURCE VOLTAGE VDS (V)

TC=25ı Tj=150ıMAX Single Pulse

10 s

1ms

10ms

DC

100 s

Operation in this area

is limited by RDS (on)

Fig. 10 Maximum Safe Operating Area

12

10

8

6

4

2

0

4

8

12

16

GATE TO SOURCE VOLTAGE VGS (V)

TC=25ı 250 s Pulse Test

ID=145A

70A

35A

Fig. 2 Typical Drain-Source On-Voltage

Fig. 2 Vs. Gate-Source Voltage

16

12

8

4

0

300

600

900

1200

1500

1800

TOTAL GATE CHRAGE Qg (nC)

ID=100A

VDD= 100V

250V

400V

Fig. 5 Typical Gate Charge

Fig. 5 Vs. Gate-Source Voltage

200

160

120

80

40

0

0.4

0.8

1.2

1.6

2.0

2.4

SOURCE TO DRAIN VOLTAGE VSD (V)

250 s Pulse Test

Tj=125ı

Tj=25ı

Fig. 8 Typical Source-Drain Diode Forward

Fig. 8 Characteristics

0.01

2

1

0.5

0.2

0.1

0.05

0.02

10

-5

10

-4

10

-3

10

-2

10

-1

110

PULSE DURATION t (s)

Per Unit Base

Rth(j-c)=0.142ı/W

1 Shot Pulse

Fig. 11-1

Normalized Transient Thermal

impedance(MOSFET)

15

12

9

6

3

0

-40

0

40

80

120

160

JUNCTION TEMPERATURE Tj ( )

VGS=10V 250 s Pulse Test

ID=140A

70A

35A

Fig. 3 Typical Drain-Source On Voltage

Fig. 3 Vs. Junction Temperature

10

5

1

2

0.5

0.2

0.1

2

5

10

20

50

100

200

ID=70A VDD=250V TC=25ı 80 s Pulse Test

SERIES GATE IMPEDANCE RG ( )

td(off)

td(on)

tr

tf

Fig. 6 Typical Switching Time

Fig. 6 Vs. Series Gate impedance

500

200

50

100

20

10

5

0

100

200

300

400

500

600

-dis/dt (A/ s)

trr

IR

IS=140A

IS=100A

Tj=125ı

Fig. 9 Typical Reverse Recovery Characteristics

0.01

2

1

0.5

0.2

0.1

0.05

0.02

10

-5

10

-4

10

-3

10

-2

10

-1

110

PULSE DURATION t (s)

Per Unit Base

Rth(j-c)=1.0ı/W

1 Shot Pulse

Fig. 11-2

Normalized Transient Thermal

impedance(DIODE)

M

O

S

F

E

T

- 320 -

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