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IRF6633 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRF6633
Description  DirectFET Power MOSFET
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6633 Datasheet(HTML) 1 Page - International Rectifier

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www.irf.com
1
6/2/05
IRF6633
DirectFET
™ Power MOSFET ‚
Description
The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6633 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
PD - 96989
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance Vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
l RoHs Compliant Containing No Lead and Bromide

l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for both Sync.FET and some Control FET
application

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.51mH, RG = 25Ω, IAS = 13A.
Notes:
DirectFET
™ ISOMETRIC
MP
SQ
SX
ST
MQ
MX
MT
MP
0
4
8
1216
2024
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VDS= 16V
VDS= 10V
ID= 13A
VDSS
VGS
RDS(on)
RDS(on)
20V max ±20V max 4.1m
Ω@ 10V 7.0mΩ@ 4.5V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
Max.
13
59
132
±20
20
16
41
13
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC
4.0nC
1.2nC
32nC
8.8nC
1.8V
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
0
5
10
15
20
TJ = 25°C
TJ = 125°C
ID = 16A


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