BUK7C10-75AITE datasheet(5/15 Pages) PHILIPS

Part #	BUK7C10-75AITE

Description	TrenchPLUS standard level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

BUK7C10-75AITE

TrenchPLUS standard level FET

Product data

Rev. 02 — 18 March 2003

5 of 15

9397 750 11048

5.

Characteristics

Table 4:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown

voltage

ID = 0.25 mA; VGS =0V

Tj =25 °C75

-

V

Tj = −55 °C70

-

V

VGS(th)

gate-source threshold voltage ID = 1 mA; VDS =VGS;

Figure 9

Tj =25 °C2

3

4

V

Tj = 175 °C1

-

V

Tj = −55 °C

-

4.4

V

IDSS

drain-source leakage current

VDS = 75 V; VGS =0V

Tj =25 °C

-

0.1

10

µA

Tj = 175 °C

-

250

µA

V(BR)GSS

gate-source breakdown

voltage

IG = ±1 mA;

−55 °C<Tj < 175 °C

20

22

-

V

IGSS

gate-source leakage current

VGS = ±10 V; VDS =0V

Tj =25 °C

-

22

1000

nA

Tj = 175 °C-

-

10

µA

RDSon

drain-source on-state

resistance

VGS =10V; ID =50A;

Figure 7 and 8

Tj =25 °C

-

8.8

10

m

Ω

Tj = 175 °C-

-

21

m

Ω

VF

forward voltage, temperature

sense diode

IF = 250 µA

648

658

668

mV

SF

temperature coefﬁcient

temperature sense diode

IF = 250 µA;

−55 °C<Tj < 175 °C

−1.4

−1.54

−1.68

mV/K

Vhys

forward voltage hysteresis

temperature sense diode

125

µA<IF < 250 µA

253250mV

ID/Isense

ratio of drain current to sense

current

VGS >10V;

−55 °C<Tj < 175 °C

450

500

550

Dynamic characteristics

Qg(tot)

total gate charge

VGS =10V; VDS =60V;

ID =25A; Figure 14

-

121

-

nC

Qgs

gate-source charge

-

20

-

nC

Qgd

gate-drain (Miller) charge

-

44

-

nC

Ciss

input capacitance

VGS =0V; VDS =25V;

f = 1 MHz; Figure 12

-

4700

-

pF

Coss

output capacitance

-

800

-

pF

Crss

reverse transfer capacitance

-

455

-

pF

td(on)

turn-on delay time

VDS = 30 V; RL = 1.2 Ω;

VGS =10V; RG =10 Ω

-35

-

nS

tr

rise time

-

108

-

nS

td(off)

turn-off delay time

-

185

-

nS

tf

fall time

-

100

-

nS

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