EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E

EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E

Item

Reflective

EE-SB5M

EE-SB5MC

EE-SB5V(-E)

EE-SB5VC

Control output

Output

configuration

Transistor on output stage

without detecting object

OFF

ON

OFF

ON

Transistor on output stage

with detecting object

ON

OFF

ON

OFF

Response frequency*

50 Hz

Connecting method

EE-1001/1006 Connectors; soldering terminals

Light source

GaAs infrared LED with a peak wavelength of 940 nm

Receiver

Si photo-transistor with a sensing wavelength of 850 nm max.

*The response frequency was measured by detecting the following disks rotating.

Disk

15 mm

15 mm

15 mm

5mm

200 mm

dia.

CHARACTERISTICS

Ambient temperature

Operating

-25

°Cto55°C (-13°F to 131°F)

Storage

-30

°Cto80°C (-22°F to 176°F)

Ambient humidity

Operating

45% to 85%

y

Storage

35% to 95%

Vibration resistance

Destruction: 20 to 2,000 Hz (with a peak acceleration of 20G’s), 1.5-mm double amplitude for

4 min each in X, Y, and Z directions

Shock resistance

Soldering heat resistance

260

°±5°C (See Note.) when the portion between the tip of the terminals and the position

1.5 mm from the terminal base is dipped into the solder for 10

±1 seconds

Note: This conforms to MIL-STD-750-2031-1.